2018 Infineon 1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11 Teardown & Comparison with Si IGBT Module Packaging, Rohm’s SiC Module Packaging & Rohm, Cree, and STMicroelectronics’ 1200V SiC MOSFET

March 12, 2018

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DUBLIN, March 12, 2018 /PRNewswire/ —
The “1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon Complete Teardown Report” report has been added to ResearchAndMarkets.com’s offering.
The market outlook for SiC devices is promising, with a compound annual growth rate…

Category: Precious Metals